company blog about IXYS IXTP160N10T N-Channel Enhancement Mode Power MOSFET Transistors

IXYS IXTP160N10T N-Channel Enhancement Mode 100V 160A Power MOSFET Transistors

Product Description Of IXTP160N10T
IXTP160N10T is N-Channel Enhancement Mode 100V 160A Power MOSFET Transistors.

Specification Of IXTP160N10T
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：160A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：132 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：6600 pF @ 25 V
Power Dissipation (Max)：430W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)

Features Of IXTP160N10T
Ultra-Low On Resistance
Avalanche Rated
Low Package Inductance
Easy to Drive and to Protect
175°C Operating Temperature
Fast Intrinsic Diode

Advantages Of IXTP160N10T
Easy to Mount
Space Savings
High Power Density

Applications Of IXTP160N10T
Automotive
Motor Drives
42V Power Bus
ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V Systems
Distributed Power Architechtures and VRMs
Electronic Valve Train Systems
High Current Switching Applications
High Voltage Synchronous Recifier